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VBFB165R06 产品详细

产品简介:

**Product Introduction:**
VBsemi's VBFB165R06 is a single N-channel MOSFET, manufactured using Plannar technology and packaged in TO251. The product features a drain-to-source voltage (VDS) of up to 650V, has low on-resistance, and is capable of withstanding a maximum drain current of up to 6A. Suitable for various occasions requiring high power switching and power management.

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产品参数:

**Detailed parameter description:**
- Brand: VBsemi
- Model: VBFB165R06
- Type: Single N-channel MOSFET
- Drain-source voltage (VDS): 650V
- Gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance at gate-source voltage 10V: 1700 m次
- Maximum drain current (ID): 6A
- Technology: Plannar
-Package:TO251

领域和模块应用:

**Examples of applicable fields and modules:**
1. **Power Management Module**: VBFB165R06 can be used in various power management modules, such as switching power supplies, DC-DC converters, etc. Its high voltage and low on-resistance characteristics enable it to provide efficient power switching functions.

2. **Electric vehicle driver**: In electric vehicle driver, this type of MOSFET can be used for electric vehicle motor drive and control. Its high voltage and current characteristics allow it to withstand the high voltage and current loads found in electric vehicle drives.

3. **Solar Inverter**: In solar power generation systems, VBFB165R06 can be used in the power switching circuit in solar inverters to achieve effective conversion and management of solar energy. Its high withstand voltage and high current characteristics make it suitable for high-voltage environments in solar power generation systems.

4. **LED Lighting**: In LED lighting systems, this type of MOSFET can be used in LED drivers and lighting control circuits. Its high voltage characteristics and low on-resistance characteristics enable it to provide reliable LED lighting control functions.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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