1. Product introduction:
VBM165R05S is a single N-type field effect transistor produced by VBsemi brand. It adopts SJ_Multi-EPI technology and is packaged in TO220. The product has a drain-source voltage (VDS) of 650V, a gate-source voltage (VGS) of 30V, a threshold voltage (Vth) of 3.5V, and a drain current (ID) of 5A. The VBM165R05S product has excellent performance and stability and is suitable for a variety of fields and modules.
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2. Detailed parameter description:
1. VDS (drain-source voltage): 650V
2. VGS (gate-source voltage): ㊣30V
3. Vth (threshold voltage): 3.5V
4. Drain resistance (m次) when VGS=10V: 950m次
5. ID (drain current): 5A
6. Technology: SJ_Multi-EPI
7. Package: TO220
3. Examples of applicable fields and modules:
1. Power management module: VBM165R05S can be used as a switching power supply in the power management module to provide stable power output and is suitable for various electronic equipment and systems.
2. LED lighting driver: In the LED lighting driver, this type of transistor can realize the current control and switching control of the LED lamp beads, helping to improve the lighting effect and energy-saving efficiency.
3. Automotive electronic systems: Suitable for circuit protection and power management in automotive electronic systems, providing stable and reliable power support to ensure the normal operation of automotive electronic equipment.
4. Industrial controller: Among industrial controllers, VBM165R05S can be used for power management and circuit protection of the controller to ensure the safe operation and stability of industrial equipment.
The above is an introduction to the VBM165R05S product, detailed parameter descriptions, and examples of applicable fields and modules.
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