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VBFB165R03SE 产品详细

产品简介:

Product introduction:
VBsemi VBFB165R03SE is a Single N MOSFET, using SJ_Deep-Trench technology and packaged in TO251. Offers high performance and stability for a variety of power control and switching applications.

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产品参数:

Detailed parameter description:
- Brand: VBsemi
- Product model: VBFB165R03SE
- MOSFET type: Single N
- Rated voltage (VDS): 650V
- Gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance when gate-source voltage is 10V: 1600m次
- Maximum continuous drain current (ID): 3A
- Technology: SJ_Deep-Trench
-Package:TO251

领域和模块应用:

Examples of applicable fields and modules:
1. LED lighting: Since VBFB165R03SE has high voltage tolerance and on-resistance, it is suitable for switch control in LED lighting drivers to achieve efficient brightness adjustment and energy-saving effects of LED lamps.
2. Power management: In various power management applications, VBFB165R03SE can be used as a key component in modules such as switching power supplies, inverters and voltage regulators to ensure stable output and efficient conversion of power.
3. Industrial control: In industrial control equipment, VBFB165R03SE can be used as power switches and control components, such as PLC controllers, frequency converters and robot control systems, to achieve efficient operation and precise control of equipment.
4. Automotive electronics: In automotive electronic systems, VBFB165R03SE can be used in power conversion modules and charging pile controllers of electric vehicles to ensure the stable and safe operation of the vehicle power system.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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