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VBFB165R02SE 产品详细

产品简介:

Product introduction:

VBFB165R02SE is a single N-type field effect transistor produced by VBsemi brand. It adopts SJ_Deep-Trench technology and is packaged as TO251. The product has a drain-source voltage (VDS) of 650V, a gate-source voltage (VGS) of 30V, a threshold voltage (Vth) of 3.5V, and a drain current (ID) of 2A. The VBFB165R02SE product has high drain resistance and low drain current and is suitable for a variety of fields and modules.

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产品参数:

Detailed parameter description:

1. VDS (drain-source voltage): 650V
2. VGS (gate-source voltage): ㊣30V
3. Vth (threshold voltage): 3.5V
4. Drain resistance (m次) when VGS=10V: 2200m次
5. ID (drain current): 2A
6. Technology: SJ_Deep-Trench
7. Package: TO251

领域和模块应用:


Examples of applicable fields and modules:

1. Power management module: VBFB165R02SE can be used as a switching power supply in the power management module to provide stable power output and is suitable for industrial equipment and electronic systems.
2. Solar photovoltaic inverter: In the solar photovoltaic inverter, this type of transistor can convert DC to AC to ensure efficient and stable operation of the solar system.
3. LED driver: Suitable for current regulation and switch control of LED lamp beads in LED drivers to improve lighting effects and energy-saving efficiency.
4. Power tool driver: Among motor drivers in power tools, VBFB165R02SE can be used for motor control and power output of power tools, improving the performance and reliability of the tool.

The above is an introduction to the VBFB165R02SE product, detailed parameter descriptions, and examples of applicable fields and modules.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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