产品参数：
Parameter Description:
- Model: VBFB165R02
- Brand: VBsemi
- Type: Single N-channel field effect transistor (MOSFET)
- Drain-source voltage (VDS): 650V
- Gate-source voltage (VGS): 30V
- Threshold voltage (Vth): 3.5V
- On-resistance when VGS=10V: 4300m次
- Maximum drain current (ID): 2A
- Technology: Plannar
-Package:TO251
领域和模块应用：
Examples of applicable fields and modules:
This product is suitable for the following areas and modules:
1. Low-power power supply: used in low-power power inverters, voltage regulators and switching power supplies.
2. Power tools: As power switches and power controllers for power tools, such as electric drills, electric saws, etc.
3. Electric vehicles: It is used in electric control systems in small electric vehicles such as electric bicycles and electric scooters.
4. LED driver: used for low-power LED lighting products, such as LED bulbs, light strips, etc.
5. Smart home equipment: used for power control and power switches in smart sockets, smart switches and other equipment.
These fields and modules require low-power, high-efficiency MOSFETs to implement power control and switching functions, and VBFB165R02 is an ideal choice to meet these requirements.
*请注意：以上只是示例应用场景，具体的应用取决于系统设计的要求和条件。在使用该器件时，请查阅其数据手册以获取详细的技术规格和特性
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