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VBFB165R01 产品详细

产品简介:

Product introduction:
VBsemi's VBFB165R01 is a single N-channel field effect transistor (Single N) product. Its key features include a drain-source voltage (VDS) of 650V, a gate-source voltage (VGS) of 30V, a threshold voltage (Vth) of 3.5V, and a drain current (ID) of 1A. It adopts Plannar technology and is packaged as TO251.

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产品参数:

Detailed parameter description:
- Drain-source voltage (VDS): 650V
- Gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance (m次) at VGS=10V: 8500
- Drain current (ID): 1A
- Technology: Plannar
-Package:TO251

领域和模块应用:

Examples of application areas and modules:
1. Low-power power module: Because VBFB165R01 has low drain current and high on-resistance, it is suitable for the design of low-power power modules, such as portable chargers, power management modules of small electronic equipment, etc.
2. Low-voltage DC-DC converter: In low-power applications, such as low-power electronic equipment, embedded systems, etc., VBFB165R01 can be used as the power switching element of low-voltage DC-DC converter to provide stable power output.
3. Electric toy control module: Since its package is suitable for small circuit boards, VBFB165R01 can be used in electric toy control modules, such as remote control cars, aircraft, etc., to provide reliable power control functions.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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