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VBFB155R02 产品详细

产品简介:


This product is a single N-type field effect transistor suitable for low to medium power applications.
With a high rated drain-source voltage (VDS) and medium on-resistance, it is suitable for applications requiring higher voltage and low to medium power.
Technically, the Plannar structure is adopted to improve performance and reliability.

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产品参数:

Product model: VBFB155R02
Brand: VBsemi
Company: Shenzhen Weibi Semiconductor Co., Ltd.
parameter:
- Type: Single N type
- Rated drain-source voltage (VDS): 550V
- Gate-source voltage range (VGS): ㊣30V
- Threshold voltage (Vth): 3V
- On-resistance (m次) when gate-source voltage is 10V: 3000
- Maximum drain current (ID): 2A
- Technology: Plannar
Package: TO251

领域和模块应用:


Application introduction:
- Applicable fields:
- Power management
- Drive circuit
- Inverter control
- LED lighting
- Smart home

for example:
1. Power management module: used in various types of power management circuits, such as switching power supplies, linear voltage regulators, etc., to provide stable power output.
2. Drive circuit module: used in various drive circuits, such as motor drive, LED drive, etc., to achieve precise motor or LED control.
3. Inverter control module: used in inverter control circuits, such as solar inverters, variable frequency air conditioners, etc., to achieve conversion and control of electrical energy.
4. LED lighting module: used to control and drive LED lighting systems, such as indoor lighting, landscape lighting, etc.
5. Smart home module: used for various control circuits in smart home systems, such as smart light control, smart sockets, etc., to provide stable and reliable switching functions.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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