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VBFB1302 产品详细

产品简介:

This product is a single N-type MOSFET. This MOSFET is suitable for circuits and modules that require high-performance switching.

Its main parameters include:
- Maximum drain-source voltage (VDS) is 30V;
- The maximum gate-source voltage (VGS) is plus or minus 20V;
- Threshold voltage (Vth) is 1.7V;
- When the gate-source voltage is 4.5V, the on-resistance (RDS(on)) is 3mΩ;
- When the gate-source voltage is 10V, the on-resistance is 2mΩ;
- Maximum drain current (ID) is 120A;
- Made using Trench technology;
- Packaged as TO251.

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产品参数:

parameter:
-Single N
- VDS(V): 30
- VGS(㊣V): 20
-Vth(V)ㄩ1.7
- RDS(on) VGS=4.5V(m次): 3
- RDS(on) VGS=10V(m次): 2
- ID (A): 120
- Technology: Trench
Package: TO251

领域和模块应用:

Application introduction:
This MOSFET is suitable for circuits and modules that require high-performance switching, especially for the following fields and modules:
- Power Inverter Module: Due to its high drain current capability and low on-resistance, it is suitable for efficient energy conversion in power inverters and driving motors.
- Electric vehicle control module: can be used for key modules such as drive control, battery management and motor control in electric vehicles.
- Industrial automation module: In industrial automation systems, it can be used for switching power supply, motor control and temperature control modules.
- High-performance power modules: Suitable for high-performance power modules that require high efficiency and high power density.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

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* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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