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VBFB1208N 产品详细

产品简介:

VBFB1208N is a high-performance single-channel N-channel field effect transistor suitable for various application scenarios requiring high performance and reliability, including power modules, electric vehicle chargers and industrial automation control systems. Its key features include high rated drain-source voltage, wide operating voltage range and low threshold voltage, making it an excellent performer in many areas.

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产品参数:

parameter:
- Type: Single N-channel FET (Single N)
- Rated drain-source voltage (VDS): 200V
- Rated gate-source voltage (VGS): ㊣20V
- Threshold voltage (Vth): 3V
- Drain-source on-resistance at VGS=10V (m次): 56
- Maximum drain current (ID): 25A
- Technology: Trench structure (Trench)
Package: TO251

领域和模块应用:


Application examples:
1. Power module: VBFB1208N can be used as a switching device in the power module to stabilize and regulate voltage to ensure the stability and efficiency of the power system.
2. Electric vehicle charger: Due to its high voltage and high current characteristics, VBFB1208N is suitable for the switching power supply part of the electric vehicle charger to help achieve fast charging and efficient energy conversion.
3. Industrial automation control: In industrial automation systems, VBFB1208N can be used in switching power supplies, motor drivers and other high-power applications to provide reliable power control and electrical isolation.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

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* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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