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VBFB1203M 产品详细

产品简介:

The VBFB1203M is a single N-channel MOSFET with a rated drain-source voltage of up to 200V and a drain current of 8A. Features include a standard gate-source voltage of ±20V, a threshold voltage of 3V, and a drain-source resistance of 270 milliohms. The device uses Trench technology and is packaged in TO251.

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产品参数:

parameter:
- Type: Single N-channel MOSFET
- Rated drain-source voltage (VDS): 200V
- Standard gate-source voltage (VGS): ㊣20V
- Threshold voltage (Vth): 3V
- Drain-source resistance (miohms) at gate-source voltage 10V: 270
- Drain current (ID): 8A
- Technology: Trench
Package: TO251

领域和模块应用:

for example:
1. Power module: Since VBFB1203M has higher rated voltage and drain current, it is suitable for various power modules, such as DC regulators and switching power supplies. In DC voltage regulators, it can be used as a power switching device at the output to achieve voltage regulation and overload protection.
2. Power tools: This MOSFET can be used in motor control modules in power tools, such as electric drills and electric saws. Its high voltage and low drain-source resistance characteristics ensure efficient operation and long-term stability of motor drive systems.
3. LED lighting: In LED lighting systems, VBFB1203M can be used as a power switching device in the LED drive circuit to achieve brightness adjustment and current control of LED lights. Its high voltage and low drain resistance characteristics ensure the stability and reliability of LED lighting systems.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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