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VBFB1151M 产品详细

产品简介:

VBFB1151M is a unipolar N-type field effect transistor with a drain-source voltage (VDS) of 150V, a gate-source voltage (VGS) of 20V, and a threshold voltage (Vth) of 2.5V. When the gate-source voltage is 10V, its on-resistance is 100mΩ and the maximum drain current (ID) is 15A. It adopts Trench technology and is packaged as TO251.

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产品参数:

parameter:
- Unipolar N type
- VDS(V): 150
-VGS(㊣V): 20
-Vth(V): 2.5
- On-resistance (m次) at VGS=10V: 100
-ID(A): 15
- Technology: Trench
Package: TO251

领域和模块应用:

This product is suitable for various fields and modules, as follows:

1. Power management module: VBFB1151M has moderate drain current and drain-source voltage, and can be used to design various power management modules, such as voltage stabilizing modules, switching power supplies, etc.

2. Lighting control module: The current and voltage characteristics of VBFB1151M make it suitable for lighting control modules, such as LED dimmers, indoor lighting controllers, etc., to provide stable power output.

3. Industrial automation module: In the industrial automation module, VBFB1151M can be used to control medium-power circuits, such as PLC control modules, industrial robot drive modules, etc., to provide reliable power control and management functions.

4. Automotive electronic modules: Due to its moderate power characteristics, VBFB1151M can be used in automotive electronic modules, such as vehicle power control modules, engine management systems, etc., to provide reliable power control and management functions.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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