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VBE5307 产品详细

产品简介:

Product introduction:
VBE5307 is a common gate N+P channel power MOSFET produced by VBsemi. It is manufactured using Trench technology and has excellent performance and reliability. This product is suitable for various power electronics applications and plays an important role in multiple fields and modules.

VBE5307 has a wide range of application scenarios and plays an important role in the field of power electronics, providing stable and reliable power control functions for various electronic devices.

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产品参数:

Detailed parameter description:
- Rated voltage (VDS): ㊣30V
- Gate-source voltage range (VGS): ㊣20V
- Threshold voltage (Vth): N-channel: 1.8V, P-channel: -1.7V
- On-resistance (m次) at VGS=4.5V: N channel: 10m次, P channel: 35m次
- On-resistance (m次) at VGS=10V: N channel: 7m次, P channel: 25m次
- Maximum leakage current (ID): N-channel: 65A, P-channel: -35A

领域和模块应用:


Examples of applicable fields and modules:
1. Power management: VBE5307 can be used in DC-DC converters and voltage regulators in power management systems, suitable for notebook computers, electronic products, etc.
2. Motor driver: Among motor drivers, VBE5307 can be used to control the speed and direction of the motor, and is suitable for household appliances, industrial machinery and other fields.
3. Power inverter: In power inverter, VBE5307 can be used as a power switch and is suitable for applications such as solar inverters and electric vehicle controllers.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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