产品参数:
**Detailed parameter description:**
**Brand:** VBsemi
**parameter:**
- Type: Single P
- Drain-source voltage (VDS): -60V
- Gate-source voltage (VGS) (㊣V): 20
- Threshold voltage (Vth) (V): -1.7
- On-resistance (m次) when turned on when gate-source voltage is 4.5V: 61
- On-resistance (m次) when turned on when the gate-source voltage is 10V: 49
- Maximum drain current (ID) (A): -20
- Technology: Trench
**Package:** TO252
领域和模块应用:
VBE2658A is suitable for a variety of fields and modules, including but not limited to:
1. **Power Management Module:** Due to its high drain current and low on-resistance, VBE2658A is ideally suited for power management modules such as DC-DC converters, switching power supplies and voltage regulators. It can provide efficient energy conversion and stable power output.
2. **Electric vehicle control system:** In the field of electric vehicles, this MOSFET can be used in electric control systems for vehicles such as electric cars, electric bicycles and electric scooters, including motor drivers, battery management systems and chargers. Its high performance and durability ensure efficient operation and long range of electric vehicles.
3. **Industrial automation module:** VBE2658A is suitable for industrial automation modules, such as industrial robots, automation control systems and production line equipment. Its high voltage tolerance and stable switching performance can meet high loads and frequent switching operations in industrial environments.
4. **Communication equipment module:** In the field of communication, this MOSFET can be used in communication equipment modules, such as base station power amplifiers, signal amplifiers and radio frequency regulators. Its high performance and reliability help improve the performance and stability of communication equipment.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性