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VBE2658 产品详细

产品简介:

VBE2658 is a high-performance single P-type field effect transistor (MOSFET) launched by VBsemi. The device features reliable drain-source and gate-source voltages, as well as low threshold voltage, making it suitable for a variety of power circuit designs. Made with Trench technology, it has good conduction characteristics and stability. The TO252 package is suitable for medium power applications, has good heat dissipation performance and ease of installation, and can meet the needs of different applications.

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产品参数:

**Product model:** VBE2658
**Brand:** VBsemi
**parameter:**
- Power supply type: Single P
- Maximum drain-source voltage (VDS): -60V
- Maximum gate-source voltage (VGS): ㊣20V
- Threshold voltage (Vth): -1.7V
- Drain-source resistance (m次) at VGS=4.5V: 58
- Drain-source resistance (m次) at VGS=10V: 46
- Maximum drain current (ID): -35A
- Technology: Trench
**Package:** TO252

领域和模块应用:

**for example:**
1. Power switch module: VBE2658 can be used for switching circuit and power control in the power switch module to ensure efficient and stable operation of the power system and reduce power loss.
2. DC motor control module: Among the DC motor control modules, VBE2658 is suitable for motor drive and speed adjustment, ensuring the stable operation of the DC motor and improving its efficiency and performance.
3. Power inverter module: Since VBE2658 has low drain-source resistance and high drain current, it can be used for power inversion and voltage regulation in power inverter modules to improve the efficiency and stability of the system. sex.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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