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VBE2625 产品详细

产品简介:

VBsemi's VBE2625 is a single P-channel power MOSFET with -60V drain-source voltage (VDS), 20V gate-source voltage (VGS), and -1.7V threshold voltage (Vth). When the gate-source voltage is 4.5V, the on-resistance when turned on is 25mΩ; when the gate-source voltage is 10V, the on-resistance when turned on is 20mΩ. This MOSFET has a maximum drain current (ID) of -50A and is manufactured using Trench technology.

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产品参数:

**Detailed parameter description:**
**Brand:** VBsemi
**parameter:**
- Unit: P
- VDS(V): -60
-VGS(㊣V): 20
- Vth(V): -1.7
- VGS=4.5V(m次): 25
- VGS=10V(m次): 20
- ID (A): -50
- Technology: Trench

**Package:** TO252

领域和模块应用:

VBE2625 is suitable for a variety of fields and modules, including but not limited to:
1. **Power Switching Module:** Due to its high drain current and low on-resistance, this MOSFET is suitable for power switching modules such as switching power supplies, inverters and power amplifiers. It provides efficient power switching and stable energy conversion.

2. **Power tool module:** In the field of power tools, VBE2625 can be used as the power control module of electric hammer drills, electric saws and other power tools. Its high performance and durability ensure efficient operation and long working hours of your power tools.

3. **Automotive electronic modules:** In the field of automotive electronics, this MOSFET can be used in automotive electronic control modules, such as ignition systems, engine control units and body control modules. Its high temperature tolerance and reliability ensure stable operation of automotive electronic systems.

4. **Communication equipment module:** In the field of communication, VBE2625 can be used in communication equipment modules, such as base station power amplifiers, signal amplifiers and radio frequency regulators. Its high performance and reliability help improve the performance and stability of communication equipment.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

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