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VBE2610N 产品详细

产品简介:

VBE2610N is a VBsemi brand single-channel P-type metal oxide semiconductor field effect transistor (MOSFET).
The high performance and reliability of the VBE2610N enable it to play an important role in a variety of industrial and consumer electronics applications.
The device is manufactured using trench technology and the device is packaged in TO252.

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产品参数:

Has the following main parameters:

- Rated drain-source voltage (VDS): -60V
- Gate-source voltage (VGS) range: ㊣20V
- Threshold voltage (Vth): -1.7V
- Drain-source resistance (RDS(on)) when gate-source voltage is 4.5V: 72m次
- Drain-source resistance (RDS(on)) when gate-source voltage is 10V: 61m次
- Maximum drain current (ID): -30A

领域和模块应用:

The application of groove technology gives it excellent performance in a variety of applications. For example,
In the power management module, VBE2610N can be used in voltage regulators, power switch modules and other fields. Its low on-resistance and high threshold voltage make it particularly suitable for applications requiring high efficiency and stability, such as power amplifier modules in wireless communication equipment, LED lighting drivers, etc. In addition, its low threshold voltage and large drain current rating also make it an ideal choice for home appliance control modules, industrial motor controllers, and other fields.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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