VBsemi's Single P series of products is a single P-channel field effect transistor (MOSFET), a multi-functional, high-performance electronic device suitable for many different application areas and modules. With the following parameters: VDS (drain-source voltage) is -30V, VGS (gate-source voltage) range is ±20V, and threshold voltage (Vth) is -1.7V. The on-resistance is 46mΩ at VGS=4.5V, 33mΩ at VGS=10V, and the maximum drain current (ID) is -38A (negative numbers represent P-channel devices). These MOSFETs are manufactured using Trench technology and are packaged in TO252.