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VBE2317 产品详细

产品简介:

VBsemi's VBE2317 is a single P-channel field effect transistor (FET), suitable for various modules and fields that require lower power consumption and higher signal stability, including but not limited to low-power power management, signal amplification , inverter control and digital circuit control and other fields.

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产品参数:

has the following parameters:

- Rated drain-source voltage (VDS): -30V
- Gate-source voltage (VGS): ㊣20V
- Threshold voltage (Vth): -1.7V
- Drain-source resistance (m次) at VGS=4.5V: 25
- Drain-source resistance (m次) at VGS=10V: 18
- Maximum drain current (ID): -40A
- Technology: Trench
-Package:TO252

领域和模块应用:

VBE2317 is suitable for a variety of fields and modules, such as:

In the power management module, VBE2317 can be used as a power switching device in a low-power switching power supply. Due to its large drain current and low power consumption characteristics, it is suitable for occasions with high power management requirements and low power consumption.

In the signal amplification module, VBE2317 can be used as a power amplifier in the signal amplification circuit. Its small drain-source resistance and low power consumption allow it to provide stable signal amplification and low static power consumption.

In the power inverter module, VBE2317 can be used as a switching tube in the inverter circuit. Its large drain current and low power consumption characteristics make it suitable for applications that require high inverter efficiency and low power consumption.

In the control module, VBE2317 can be used as a switch controller in digital circuits. Its fast switching speed and low power consumption allow it to provide stable digital signal control and low static power consumption.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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