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VBE2102N 产品详细

产品简介:

VBE2102N is a single-channel P-type MOSFET produced by the VBsemi brand. It is suitable for high-power and high-performance electronic modules that require P-type MOSFETs, providing reliable power control and management solutions for various application scenarios.
This product uses Trench technology and is packaged in TO252.

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产品参数:

Has the following main parameters:
The operating voltage VDS is -100V, the gate-source voltage VGS is ㊣20V, the threshold voltage Vth is -2V, the on-resistance when VGS=4.5V is 21m次, the on-resistance when VGS=10V is 17m次, and the maximum leakage current The ID is -50A.

领域和模块应用:

VBE2102N is suitable for application modules in a variety of fields, such as:

1. Power switch module: In the power switch circuit, VBE2102N can be used as a power switching device to control the switching and regulation of electric energy. Its low on-resistance enables operation at high frequencies, for example in power switching modules in power inverters.

2. Automotive electronic module: In automotive electronic systems, VBE2102N can be used to drive the vehicle's electric motor and control various functional modules of the vehicle. Its high voltage and high on-current characteristics make it suitable for high-power applications in automotive circuits, such as for motor driver modules in electric vehicles.

3. Industrial control module: In the field of industrial automation, VBE2102N can be used in drive motor modules, sensor interface modules and industrial robot control modules in factory automation systems. Its high on-current and low on-resistance characteristics allow it to withstand high power and high temperatures in industrial environments with reliable performance.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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