产品参数:
Detailed parameter description:
- Rated drain-source voltage (VDS): -100V
- Gate-source voltage (VGS): ㊣20V
- Threshold voltage (Vth): -2V
- Drain-source resistance (m次) when gate-source voltage is 4.5V: 280m次
- Drain-source resistance (m次) when gate-source voltage is 10V: 250m次
- Quiescent drain current (ID): -8.8A
领域和模块应用:
Application introduction:
VBE2102M is suitable for a variety of fields and modules. It has the characteristics of high-performance power switches and can be used in the following scenarios:
1. Power management module: This MOSFET can be used in power switches in power management modules, such as power adapters, voltage regulators, etc., to provide stable and reliable power output.
2. Automotive electronic systems: In automotive electronic systems, VBE2102M can be used in battery management systems and motor control modules of electric vehicles to ensure high performance and drive control of the vehicle.
3. LED lighting system: Suitable for power switch modules in LED lighting systems, such as LED drivers, lighting controllers, etc., to achieve high-efficiency and adjustable lighting.
4. Industrial control equipment: This MOSFET can be used in power switches and drive control modules in industrial control equipment, such as industrial robots, PLC controllers, etc., to improve the efficiency and reliability of the system.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性