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VBE19R11S 产品详细

产品简介:

Product introduction:

VBsemi's VBE19R11S is a Single N-type field effect transistor manufactured using SJ_Multi-EPI technology. It features a drain-to-source voltage (VDS) of up to 900V and supports a maximum gate-source voltage (VGS) of 30V. In addition, it has a gate threshold voltage (Vth) of 3.5V, an on-resistance of 380mΩ when VGS is 10V, and a maximum drain current (ID) of 11A. This product is packaged as TO252.

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产品参数:

Detailed parameter description:

- Model: VBE19R11S
- Brand: VBsemi
- Type: Single N-type field effect transistor
- Technology: SJ_Multi-EPI
- Drain-source voltage (VDS): 900V
- Gate-source voltage (VGS): ㊣30V
- Gate threshold voltage (Vth): 3.5V
- On-resistance when VGS=10V: 380m次
- Maximum drain current (ID): 11A
-Package:TO252

领域和模块应用:





Applicable fields and modules:

This product is suitable for the following areas and modules:
1. Power management module: Due to its high drain-source voltage and moderate on-resistance, it is suitable for designing high-power switching power supplies and voltage regulators.
2. Industrial control system: It can be used in power switch modules in industrial control systems to achieve precise control of industrial equipment.
3. High-end electric vehicle motor driver: In high-end electric vehicles, it can be used in motor drive modules to achieve high-efficiency electric vehicle drive.
4. Solar inverter: In a solar inverter, it can be used as a power switch module to convert solar energy into electrical energy and connect it to the grid.

These are just some examples, in fact this product may also be suitable for many other fields and modules, depending on its technical parameters and application requirements.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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