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VBE19R08S 产品详细

产品简介:

Product introduction:

VBE19R08S is a single N-channel MOSFET produced by VBsemi, with a drain-source voltage (VDS) of 900V, a gate-source voltage (VGS) of 30V, and a threshold voltage (Vth) of 3.5V. It adopts SJ_Multi-EPI technology and is packaged as TO252. This product features high drain current and moderate on-resistance, making it suitable for a variety of high-voltage applications.

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产品参数:

Detailed parameter description:

- VDS (drain-source voltage): 900V
- VGS (gate-source voltage): ㊣30V
- Vth (threshold voltage): 3.5V
- On-resistance (m次) at VGS=10V: 560m次
- Maximum drain current (ID): 8A
- Technology: SJ_Multi-EPI
-Package:TO252

领域和模块应用:

Examples of applicable fields and modules:

1. Solar inverter: suitable for power switches and DC-AC converters in solar inverters to achieve effective utilization of solar energy.
2. Electric vehicle charging piles: In electric vehicle charging piles, they can be used for power switches and control circuits to achieve efficient and fast charging.
3. Industrial high-voltage power module: Among industrial high-voltage power modules, this product can be used in switching power supplies and DC-DC converters to provide stable high-voltage output.
4. LED lighting: Suitable for power switching and dimming control in LED lighting applications, providing efficient lighting solutions.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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