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VBE19R07S 产品详细

产品简介:

Product introduction:
VBsemi's VBE19R07S model is a single-channel N-channel power MOSFET with a drain-source voltage (VDS) of 900V, a drain current (ID) of 7A, and a threshold voltage (Vth) of 3.5V. It adopts SJ_Multi-EPI technology and is packaged as TO252. This MOSFET is suitable for high-voltage and high-power application scenarios and has low on-resistance and high drain current tolerance.

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产品参数:

Detailed parameter description:
- Product model: VBE19R07S
- Brand: VBsemi
- Type: Single channel N-channel power MOSFET
- Maximum drain-source voltage (VDS): 900V
- Gate-source voltage (VGS) range: ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance (m次) at VGS=10V: 770
- Maximum drain current (ID): 7A
- Technology: SJ_Multi-EPI
-Package:TO252

领域和模块应用:

Examples of application areas:
1. Power module: VBE19R07S can be used as a switching power supply in the power module to provide stable high-voltage power output and is suitable for server power supply, industrial power supply and other fields.
2. Electric vehicle charging piles: In electric vehicle charging piles, which need to withstand higher voltages and currents, VBE19R07S can be used as a switching element to control and regulate the charging process.
3. Solar inverter: In solar inverters, high-efficiency power switching devices are required to realize the conversion and output of solar energy. The high voltage and current characteristics of VBE19R07S make it an ideal choice for inverter modules.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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