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VBE19R02S 产品详细

产品简介:

Product introduction:
VBsemi's VBE19R02S model is a Single N-type power field effect transistor (MOSFET) packaged in TO252. The device is manufactured using SJ_Multi-EPI technology and offers excellent performance and reliability. Its key features include a rated drain-source voltage (VDS) of 900V, a maximum drain current (ID) of 2A, a turn-on voltage (Vth) of 3.5V, and an on-resistance of 2700mΩ at VGS=10V.

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产品参数:

Detailed parameter description:
- Product model: VBE19R02S
- Brand: VBsemi
- Parameters:
- Type: Single N
- Rated drain-source voltage (VDS): 900V
- Rated gate-source voltage (VGS): ㊣30V
- Turn-on voltage (Vth): 3.5V
- On-resistance at VGS=10V: 2700m次
- Maximum drain current (ID): 2A
- Technology: SJ_Multi-EPI
-Package:TO252

领域和模块应用:

Examples of application areas:
1. Solar inverter: Since VBE19R02S has a high rated drain-source voltage and moderate on-resistance, it is suitable for power switches in solar inverters to convert DC power generated by solar photovoltaic panels into AC power. , supplying power to domestic or industrial power networks.
2. Electric vehicle charging piles: The performance characteristics of this device make it very suitable for use as power switches in electric vehicle charging piles to control the current and voltage during the charging process to achieve fast and efficient charging.
3. Industrial automation equipment: VBE19R02S can be used as power switch modules in industrial automation equipment, such as PLC, frequency converters, etc., to control the start, stop and operating status of the equipment.

These areas and modules require the use of power MOSFETs to control current and voltage, and the performance characteristics of the VBE19R02S make it an ideal choice in these applications.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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