VBE195R03 - VBsemi MOS管制造商

VBE195R03 产品详细

描述
参数
应用
技术支持

产品简介：

Product introduction:
VBE195R03 is a Single N-type field effect transistor produced by VBsemi and is suitable for various electronic applications. It has high voltage tolerance and low threshold voltage for reliable performance in different scenarios.

Detailed parameter description:
- VDS(V): Maximum drain-source voltage is 950V.
- VGS(±V): Gate-source voltage range is ±30V.
- Vth(V): Threshold voltage is 3.3V.
- VGS=4.5V(mΩ): When the gate-source voltage is 4.5V, the drain-source resistance is 6750 mΩ.
- VGS=10V(mΩ): When the gate-source voltage is 10V, the drain-source resistance is 5400 mΩ.
- ID (A): Maximum drain current is 3A.
- Technology: Using Plannar technology.

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产品参数：

Product model: VBE195R03
Brand: VBsemi
Parameters: Single N
VDS(V): 950
VGS(㊣V): 30
Vth(V): 3.3
VGS=4.5V(m次): 6750
VGS=10V(m次): 5400
ID(A): 3
Technology: Planner
Package: TO252

领域和模块应用：

Examples of applicable fields and modules:
1. Industrial control systems: Due to its high voltage tolerance and reliability, VBE195R03 can be used as power management and circuit protection modules in industrial control systems.
2. Automotive electronics: In the field of automotive electronics, this model can be used in drive and power inverter modules for electric vehicles to provide high efficiency and reliability.
3. Solar inverter: Due to its high voltage tolerance and low threshold voltage, VBE195R03 can achieve efficient energy conversion and stable power output in solar inverters.

*请注意：以上只是示例应用场景，具体的应用取决于系统设计的要求和条件。在使用该器件时，请查阅其数据手册以获取详细的技术规格和特性

技术支持：

* 如果您对产品有任何问题，请填写表格提交，我们会24小时内回复您

MOSFET

VBE195R03 产品详细

产品简介：

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产品参数：

领域和模块应用：

技术支持：

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