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VBE18R07S 产品详细

产品简介:

Product introduction:

VBsemi's VBE18R07S is a single N-type MOSFET with the following key features: a maximum drain-source voltage (VDS) of 800V, a maximum gate-source voltage (VGS) of ±30V, and a threshold voltage (Vth) of 3.5V. When VGS=10V, its on-resistance is 770 mΩ and the maximum drain current (ID) is 7A. This product uses SJ_Multi-EPI technology and is packaged in TO252.

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产品参数:

Detailed parameter description:

- Product model: VBE18R07S
- Brand: VBsemi
- Type: Single N-type MOSFET
- Maximum drain-source voltage (VDS): 800V
- Maximum gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance at VGS=10V: 770 m次
- Maximum drain current (ID): 7A
- Technology: SJ_Multi-EPI
-Package:TO252

领域和模块应用:

Examples of applicable fields and modules:

VBE18R07S MOSFET is suitable for a variety of fields and modules. The following are some typical application scenarios:
1. Power supply module: used in switching power supplies, inverters, etc. to control current and voltage output.
2. Electric vehicle charge and discharge management: used in chargers and motor drive systems of electric vehicles to manage the battery charge and discharge process.
3. Industrial control: suitable for current and voltage control modules in industrial automation equipment, such as frequency converters, PLCs, etc.
4. Lighting applications: Can be used in LED drive circuits to adjust the brightness and color temperature of lighting equipment.
5. Automotive electronics: Suitable for functional modules such as power management, motor drive and control in automotive electronic systems.

The above are some typical application scenarios of VBE18R07S MOSFET. Its characteristics make it have wide application potential in various applications requiring high voltage and high current control.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

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