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VBE18R02S 产品详细

产品简介:

Product introduction: VBsemi's VBE18R02S is a single N-channel MOSFET using SJ_Multi-EPI technology and packaged in TO252. The product has a drain-source voltage (VDS) of up to 800V and a maximum drain current (ID ), and a gate-source voltage (VGS) of 30V. Features include a low gate-source voltage threshold (Vth) of 3.5V and low on-resistance of 2600mΩ (VGS=10V), making it suitable for a variety of power control and switching applications. .

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产品参数:

Detailed parameter description:
- Product model: VBE18R02S
- Brand: VBsemi
- Type: Single N-channel MOSFET
- Technology: SJ_Multi-EPI
-Package: TO252
- Maximum drain-source voltage (VDS): 800V
- Maximum gate-source voltage (VGS): ㊣30V
- Gate-source voltage threshold (Vth): 3.5V
- Drain resistance (m次) when gate-source voltage is 10V: 2600
- Maximum drain current (ID): 2A

领域和模块应用:



Application areas and module examples:
1. Industrial power modules: Due to its high drain-source voltage and higher drain current capability, VBE18R02S is suitable for industrial power modules such as power converters and inverters.
2. LED lighting driver: The low gate-source voltage threshold and low on-resistance of VBE18R02S make it an ideal choice in LED lighting driver circuits to achieve high efficiency and stable power output.
3. Electric vehicle charger: This MOSFET can be used in switching power supply modules in electric vehicle chargers to support high voltage and high current charging requirements and improve charging efficiency.
4. Solar inverter: Due to its high voltage and high current capabilities, VBE18R02S can be used in solar inverters to convert the DC output of solar panels into AC power for use in the power grid.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

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