产品参数:
Detailed parameter description:
- Model: VBE185R05
- Brand: VBsemi
- Type: Single N-type field effect transistor
- Technology: Plannar
- Drain-source voltage (VDS): 850V
- Gate-source voltage (VGS): ㊣30V
- Gate threshold voltage (Vth): 3.5V
- On-resistance when VGS=4.5V: 2750m次
- On-resistance when VGS=10V: 2200m次
- Maximum drain current (ID): 5A
-Package: TO252
领域和模块应用:
Applicable areas and modules:
This product is suitable for the following areas and modules:
1. Power management module: Due to its high drain-source voltage and moderate on-resistance, it is suitable for designing high-voltage switching power supplies and voltage regulators.
2. Industrial motor driver: It can be used as a power switch module in industrial motor control systems to provide reliable motor drive functions.
3. Solar inverter: In a solar inverter, high-efficiency conversion of solar panels and grid connection can be achieved.
4. High-voltage direct current (HVDC) system: It can be used as a power switch module in the HVDC system to achieve long-distance high-voltage direct current transmission.
These are just some examples, in fact this product may also be suitable for many other fields and modules, depending on its technical parameters and application requirements.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性