产品简介:
Product introduction:
VBE185R02 is a single N-channel MOSFET of the VBsemi brand, using Plannar technology and packaged in TO252. The product features a drain-source voltage (VDS) of 850V, is capable of withstanding a gate-source voltage (VGS) of ±30V, and has a threshold voltage (Vth) of 3.5V. When VGS=4.5V, it has an on-resistance of 8125mΩ, and when VGS=10V, it has an on-resistance of 6500mΩ. Rated drain current (ID) is 2A and suitable for a variety of industrial and electronic applications.
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产品参数:
Detailed parameter description:
- Product model: VBE185R02
- Brand: VBsemi
- Type: Single N-channel MOSFET
- VDS (drain-source voltage): 850V
- VGS (gate-source voltage): ㊣30V
- Vth (threshold voltage): 3.5V
- On-resistance when VGS=4.5V: 8125m次
- On-resistance when VGS=10V: 6500m次
- Rated drain current (ID): 2A
- Technology: Plannar
-Package:TO252
领域和模块应用:
Examples of applicable fields and modules:
1. LED lighting module: VBE185R02 has high drain voltage and low on-resistance, and can be used as a switch controller in LED lighting modules to help achieve efficient power supply and dimming control of LED lights.
2. Solar photovoltaic inverter: In solar power generation systems, inverters are used to convert DC power into AC power. VBE185R02 can be used as a key component of the inverter to help achieve efficient conversion of solar energy and access to the grid.
3. Electric vehicle charging piles: In electric vehicle charging piles, power switching devices need to withstand high voltage and current. VBE185R02 can be used for switch control and power management of electric vehicle charging piles to achieve fast charging and safe power supply of electric vehicles.
4. Industrial control devices: In the field of industrial automation control, VBE185R02 can be used for switch control and power management in industrial control modules, such as temperature control, motor drive, etc., to help realize automation and intelligence in industrial production.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性