产品参数:
Detailed parameter description:
- Product model: VBE17R11SE
- Brand: VBsemi
- Type: Single N-type field effect transistor
- Maximum drain-source voltage (VDS): 700V
- Gate-source voltage (VGS): 30V (positive and negative)
- Threshold voltage (Vth): 3.5V
- On-resistance when gate-source voltage is 10V: 330m次
- Maximum drain current (ID): 11A
- Technology: SJ_Deep-Trench
-Package:TO252
领域和模块应用:
Examples of product applicable fields and modules:
1. Power module: Since VBE17R11SE has high drain-source voltage and high drain current, it is suitable for various power conversion and power management modules, such as switching power supplies, inverters, etc.
2. Electric vehicle charger: This product can be used as a switching tube in an electric vehicle charger to achieve a high-efficiency charging process.
3. Solar inverter: Since VBE17R11SE has high withstand voltage and low on-resistance, it is suitable for power switch modules in solar inverters to improve the conversion efficiency of the system.
4. Industrial electronic equipment: It can be used in power switches and power management modules in various industrial electronic equipment, such as frequency converters, UPS systems, etc., to improve the performance and reliability of the equipment.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性