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VBE17R11SE 产品详细

产品简介:

Product introduction:
VBsemi's VBE17R11SE is a Single N-type field effect transistor, manufactured using SJ_Deep-Trench technology and packaged in TO252. The product features a drain-source voltage (VDS) of up to 700V, a gate-source voltage (VGS) of 30V, and a threshold voltage (Vth) of 3.5V. Its on-resistance is 330mΩ at a gate-source voltage of 10V, and its maximum drain current (ID) is 11A.

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产品参数:

Detailed parameter description:
- Product model: VBE17R11SE
- Brand: VBsemi
- Type: Single N-type field effect transistor
- Maximum drain-source voltage (VDS): 700V
- Gate-source voltage (VGS): 30V (positive and negative)
- Threshold voltage (Vth): 3.5V
- On-resistance when gate-source voltage is 10V: 330m次
- Maximum drain current (ID): 11A
- Technology: SJ_Deep-Trench
-Package:TO252

领域和模块应用:

Examples of product applicable fields and modules:
1. Power module: Since VBE17R11SE has high drain-source voltage and high drain current, it is suitable for various power conversion and power management modules, such as switching power supplies, inverters, etc.
2. Electric vehicle charger: This product can be used as a switching tube in an electric vehicle charger to achieve a high-efficiency charging process.
3. Solar inverter: Since VBE17R11SE has high withstand voltage and low on-resistance, it is suitable for power switch modules in solar inverters to improve the conversion efficiency of the system.
4. Industrial electronic equipment: It can be used in power switches and power management modules in various industrial electronic equipment, such as frequency converters, UPS systems, etc., to improve the performance and reliability of the equipment.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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