产品参数:
Detailed parameter description:
- Brand: VBsemi
- Model: VBE17R10S
- Type: Single N-channel MOSFET
- Maximum drain-source voltage (VDS): 700V
- Maximum gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- Drain-source resistance (m次) at VGS=10V: 600m次
- Maximum drain current (ID): 10A
- Technology: SJ_Multi-EPI
-Package:TO252
领域和模块应用:
Application example:
The product is suitable for multiple areas and modules, such as:
- Power module: can be used for power control and current regulation in switching power supplies, battery management systems and LED drivers.
- Communication equipment: suitable for power switching and signal conditioning in base station equipment, optical communication modules and network equipment.
- Automotive electronic systems: It can be used for power management and circuit protection in automotive electronic control fields such as automotive electrification systems, engine control units and on-board charging equipment.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性