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VBE17R08SE 产品详细

产品简介:

Product introduction:
VBsemi's VBE17R08SE is a Single N-type MOSFET manufactured using SJ_Deep-Trench technology. The product features a drain-source voltage (VDS) of 700V, a gate-source voltage (VGS) of 30V, and a threshold voltage (Vth) of 3.5V. It is packaged in TO252 and is suitable for a variety of electronic devices and applications.

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产品参数:

Detailed parameter description:
- Drain-source voltage (VDS): 700V
- Gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance (m次) at VGS=10V: 540m次
- Maximum drain current (ID): 8A
- Technology: SJ_Deep-Trench
-Package:TO252

领域和模块应用:

Examples of applicable fields and modules:
1. Industrial power module: Because VBE17R08SE has high drain-source voltage and drain current, it is suitable for industrial-grade power modules, such as factory automation equipment and power systems.
2. Electric vehicle charger: The high voltage and high current characteristics of this product make it suitable for electric vehicle charger modules, which can provide stable power output and fast charging speed.
3. Solar inverter: In solar power generation systems, VBE17R08SE can be used in inverter modules to convert DC power into AC power for use in the power grid or stored in batteries.
4. Power management module: Its low on-resistance and high drain-source voltage make it suitable for a variety of power management modules, including switching regulators and switching power supplies.

These examples illustrate that VBE17R08SE can be widely used in industrial, automotive, energy and electronic equipment and other fields, and plays an important role in different modules.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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