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VBE17R07S 产品详细

产品简介:

Product introduction:
VBsemi's VBE17R07S is a single N-channel MOSFET with a drain-source voltage (VDS) of up to 700V, a gate-source voltage (VGS) of 30V, and a threshold voltage (Vth) of 3.5V. Manufactured using SJ_Multi-EPI technology and packaged in TO252, it has high performance and reliability.

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产品参数:

Detailed parameter description:
- Drain-source voltage (VDS): 700V
- Gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance (m次) at VGS=10V: 750m次
- Maximum drain current (ID): 7A
- Technology: SJ_Multi-EPI
-Package:TO252

领域和模块应用:

Examples of applicable fields and modules:
1. Power module: VBE17R07S can be used in modules such as low-power switching power supplies, LED drive power supplies and inverters to provide high efficiency and stability.
2. Automotive electronics: In automotive electronic systems, this device can be used in applications such as vehicle charging piles, vehicle power management and drive control of electric vehicles.
3. Industrial control: Suitable for industrial automation control systems, PLC control modules and motor drivers, etc., providing reliable power switching solutions.
4. LED lighting: In LED lighting applications such as outdoor lighting, landscape lighting, and stage lighting, this MOSFET can be used in power factor correction (PFC) circuits and LED driving power supplies to improve efficiency and stability.

These are just some examples, actual application depends on specific design needs and system requirements.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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