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VBE175R05 产品详细

产品简介:

Product introduction:

VBE175R05 is a single N-channel field effect transistor product produced by VBsemi. It has a drain-source voltage (VDS) of 750V, a gate-source voltage (VGS) of 30V, and a threshold voltage (Vth) of 3.5V. When VGS=4.5V, its on-state resistance is 2750mΩ, when VGS=10V it is 2200mΩ, and the maximum drain current (ID) is 5A. It adopts Plannar technology and is packaged as TO252.

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产品参数:

Detailed parameter description:

- Product model: VBE175R05
- Brand: VBsemi
- Parameters:
- Drain-source voltage (VDS): 750V
- Gate-source voltage (VGS): 30V (㊣)
- Threshold voltage (Vth): 3.5V
- On-state resistance (m次) when VGS=4.5V: 2750
- On-state resistance (m次) when VGS=10V: 2200
- Maximum drain current (ID): 5A
- Technology: Plannar
-Package: TO252

领域和模块应用:


VBE175R05 products are suitable for the following fields and modules:

1. Power management module: Due to its high drain voltage and large drain current, it can be used to design high-performance switching power supply modules, such as DC-DC converters.
2. LED lighting driver: In the LED lighting system, it can be used as the output transistor of the LED driver to adjust the brightness and current of the LED and improve the efficiency and stability of the lighting system.
3. Electric vehicles: In the motor drive system of electric vehicles, it can be used in motor control modules to achieve efficient control and energy conversion of electric vehicle motors.
4. Industrial control system: Used in motor drivers, inverters and other modules in industrial automation control systems to achieve efficient control of industrial production equipment and energy conversion.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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