产品参数:
Detailed parameter description:
- Product model: VBE175R04
- Brand: VBsemi
- Type: Single N-type field effect transistor
- Maximum drain-source voltage (VDS): 750V
- Gate-source voltage (VGS): 30V (positive and negative)
- Threshold voltage (Vth): 3.5V
- On-resistance when gate-source voltage is 4.5V: 3375m次
- On-resistance when gate-source voltage is 10V: 2700m次
- Maximum drain current (ID): 4A
- Technology: Plannar
-Package:TO252
领域和模块应用:
Examples of product applicable fields and modules:
1. Solar inverter: Since VBE175R04 has a high drain voltage and moderate drain current, it is suitable for power switch modules in solar inverters to improve the conversion efficiency and stability of the system.
2. Electric vehicle charging piles: It can be used as a power switch module in electric vehicle charging piles to achieve a high-efficiency charging process.
3. Industrial power module: Suitable for power switching devices in various industrial power modules, such as switching power supplies, inverters, etc., to provide stable and reliable power output.
4. Power electronic equipment: It can be used in power switch modules in various power electronic equipment, such as frequency converters, UPS systems, etc., to improve the performance and reliability of the equipment.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性