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VBE175R02 产品详细

产品简介:

Product introduction:
The VBE175R02 is a VBsemi branded single N-type field effect transistor (FET) using Plannar technology for low power applications. It has the characteristics of high efficiency and stability, making it an ideal choice for various low-power electronic systems and modules.

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产品参数:

Detailed parameter description:
- Operating voltage (VDS): 750 volts
- Gate-source voltage (VGS): ㊣30 volts
- Threshold voltage (Vth): 3.5 Volts
- On-resistance (m次) at gate-source voltage 4.5 volts: 8125
- On-resistance (m次) at gate-source voltage 10 volts: 6500
- Maximum current rating (ID): 2 amps
- Technology: Plannar
-Package:TO252

领域和模块应用:

Application examples:
1. **Power Module**: Suitable for low-power switching power supply modules, such as small chargers, battery management systems and home electronics.
2. **LED driver**: used as current regulator and controller in LED lighting systems to achieve brightness adjustment and energy-saving functions.
3. **Medical Equipment**: Power management modules in medical equipment, such as medical ultrasound equipment and portable medical equipment, ensure the stable operation and safety of the equipment.
4. **Consumer Electronics**: Power management modules in various portable electronic products, such as smartphones, tablets and portable speakers, provide stable power output.
5. **Automotive Electronics**: Auxiliary power modules in automotive electronic systems, such as car chargers and car entertainment systems, provide reliable power support.

These examples illustrate the wide range of applications of the VBE175R02 module in various fields, highlighting its high efficiency and stability under low power conditions.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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