产品参数:
Detailed parameter description:
- Product model: VBE16R16S
- Brand: VBsemi
- Type: Single N-channel MOSFET
- Drain-source voltage (VDS): 600V
- Gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance at VGS=10V: 230m次
- Maximum drain current (ID): 16A
- Manufacturing process: SJ_Multi-EPI
-Package form: TO252
领域和模块应用:
Examples of applicable fields and modules:
1. Power management: VBE16R16S is suitable for various power management modules, such as switching power supplies, battery charge and discharge management systems, etc., providing stable and efficient power control and protection.
2. Automotive electronics: In automotive electronic systems, this device can be used in power switch modules such as engine control units (ECUs), on-board charging piles, and electric vehicle drive systems to achieve efficient power conversion and control.
3. LED lighting: VBE16R16S can be used as a power control module in LED lighting systems to provide stable power output and regulation to ensure the brightness and life of LED lamps.
4. Industrial automation: In industrial control systems, this device can be used in various motor control, switch control and power conditioning modules to provide reliable power control and protection functions for the efficient operation of industrial equipment.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性