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VBE16R05 产品详细

产品简介:

Product introduction:
VBE16R05 is a Single N-type MOSFET produced by VBsemi, manufactured using Plannar technology. The device has a drain-to-source voltage (VDS) of 600V, a gate-source voltage (VGS) of 30V, and a gate threshold voltage (Vth) of 3.5V. Its package is TO252.

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产品参数:

Detailed parameter description:
- Drain-source voltage (VDS): 600V
- Gate-source voltage (VGS): ㊣30V
- Gate threshold voltage (Vth): 3.5V
- Drain-source resistance (m次) at 4.5V gate voltage: 1000m次
- Drain-source resistance (m次) at 10V gate voltage: 800m次
- Maximum drain current (ID): 6.2A
- Technology: Plannar

领域和模块应用:

Application example:
- Low power switching power supply: Since VBE16R05 has low drain current and moderate drain resistance, it is suitable for low power switching power supply modules such as small chargers and adapters.
- LED Driver: In LED lighting systems, this device can be used for power switching and dimming functions in LED drivers, providing efficient power management and control.
- Automotive electronics: As a key component in automotive electronic systems, the VBE16R05 can be used to drive low-power motors and perform control tasks for in-vehicle electronic equipment.
- Industrial Control: In industrial automation and control systems, the device can be used to control low-power devices and perform tasks such as sensor interfacing.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

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* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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