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VBE16R02SE 产品详细

产品简介:

Product introduction: VBE16R02SE is a VBsemi brand single N-type field effect transistor, which is packaged as TO252 using SJ_Deep-Trench technology. It has a drain-source voltage (VDS) of 600V, a gate-source voltage (VGS) of 30V, and a 3.5V threshold voltage (Vth), on-resistance of 1700mΩ (VGS=10V), and drain current (ID) of 2A.

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产品参数:

Detailed parameter description:
- Drain-source voltage (VDS): 600V
- Gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance when gate-source voltage is 10V: 1700m次
- Drain current (ID): 2A
- Technology: SJ_Deep-Trench
-Package:TO252

领域和模块应用:

Examples of applicable fields and modules:
1. Low power power module: suitable for low power power inverter, DC-DC converter and other modules, providing stable power conversion and power control.
2. Lighting control: It can be used in modules such as LED lighting drivers and light regulators to provide stable power control and light adjustment functions.
3. Smart home system: The power switch module in the smart home system realizes intelligent control and management of home appliances.
4. Electric toys and small appliances: Suitable for power management and motor drive modules in electric toys and small appliances, providing sufficient power and reliability.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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