产品参数:
Detailed parameter description:
- Brand: VBsemi
- Model: VBE16R02S
- Type: Single N-channel field effect transistor
- Maximum drain-source voltage (VDS): 600V
- Maximum gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance (m次) when gate-source voltage is 10V: 2300
- Maximum drain current (ID): 2A
- Technology: SJ_Multi-EPI
-Package:TO252
领域和模块应用:
Examples of applicable fields and modules:
1. Low-power power module: Since VBE16R02S has moderate voltage and current tolerance, it can be used to design low-power power modules, such as low-power inverters, power adapters, etc.
2. LED driver: In the field of LED lighting, it can be used as a power switching device in the LED driver to achieve high-efficiency driving and dimming control of LED lights.
3. Household appliances: Suitable for power control and switching circuits in household appliances, such as televisions, washing machines, etc., to ensure normal operation and energy saving of the equipment.
4. Power tools: In power tools, it can be used as a power switching device to achieve high-efficiency drive and control of the motor, improving the performance and reliability of the tool.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性