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VBE16R02 产品详细

产品简介:

Product introduction:
Model: VBE16R02
Brand: VBsemi
Package: TO252
parameter:
-Single N
- VDS(V): 600
-VGS(±V): 30
-Vth(V): 3.5
- VGS=4.5V(mΩ): 3695
- VGS=10V(mΩ): 3560
-ID(A): 2
- Technology: Plannar

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产品参数:

Detailed parameter description:
1. Single N: Single N channel
2. VDS(V): 600 - Saturated Drain-Source Voltage
3. VGS(㊣V): 30 - Gate-source voltage (maximum)
4. Vth(V): 3.5 - Gate threshold voltage
5. VGS=4.5V(m次): 3695 - Drain-source resistance at VGS=4.5V
6. VGS=10V(m次): 3560 - Drain-source resistance at VGS=10V
7. ID (A): 2 - Continuous Drain Current
8. Technology: Plannar - Planar structure technology

领域和模块应用:

Applicable areas and modules:
1. Low-power electronic devices: Due to its low drain-source resistance and low power consumption characteristics, it is suitable for low-power electronic devices such as sensor interfaces and microcontroller power management.
2. Battery management system: In small battery management systems, such as battery charge and discharge management modules in portable devices and smart home products.
3. Smart sensor network: Can be used for node devices in smart sensor networks, such as Internet of Things (IoT) devices and environmental monitoring sensors.
4. Medical devices: Suitable for low-power medical devices, such as portable medical monitoring equipment and medical sensors.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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