MOSFET

您现在的位置 > 首页 > MOSFET

VBE165R20S 产品详细

产品简介:


Product introduction: VBsemi's VBE165R20S is a TO252 packaged N-channel field effect transistor, manufactured using SJ_Multi-EPI technology. It features a drain-to-source voltage (VDS) of 650V, a drain current (ID) of 20A, a gate-source voltage (VGS) of 30V, a gate threshold voltage (Vth) of 3.5V, and an on-resistance (VGS) of 160mΩ =10V). This product is suitable for low to medium power applications.

文件下载

下载PDF 文档
立即下载

产品参数:

Detailed parameter description:
- Voltage parameters: VDS (drain-source voltage) is 650V, VGS (gate-source voltage) is ㊣30V, Vth (gate threshold voltage) is 3.5V.
- Current parameters: ID (drain current) is 20A.
- Technical characteristics: Using SJ_Multi-EPI technology.
- On-resistance: 160m次 at VGS=10V.
- Package: TO252.

领域和模块应用:

Examples of applicable fields and modules:
1. Power switch module: used for low and medium power switch modules, such as household power adapters, TV set-top box power supplies, etc.
2. LED driver: In LED lighting products, it can be used to drive low and medium power LED lamp beads, such as home lighting fixtures, commercial lighting strips, etc.
3. Automotive electronics: Suitable for low and medium power circuits in automotive electronic systems, such as automotive lighting, air conditioning control, etc.
4. Industrial controller: used for low and medium power actuators and controllers in industrial automation control systems, such as PLC (programmable logic controller) output modules, sensor signal amplifiers, etc.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

打样申请

在线咨询

电话咨询

400-655-8788

微信咨询

一键置顶

打样申请
在线咨询
电话咨询
微信咨询