产品参数:
Detailed parameter description:
- Brand: VBsemi
- Product model: VBE165R09S
- MOSFET type: Single N
- Rated voltage (VDS): 650V
- Gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance when gate-source voltage is 10V: 500m次
- Maximum continuous drain current (ID): 9A
- Technology: SJ_Multi-EPI
-Package:TO252
领域和模块应用:
Examples of applicable fields and modules:
1. Industrial power module: Due to its high voltage and high on-current characteristics, VBE165R09S can be widely used in industrial power modules, such as motor drives and inverters.
2. Automotive electronics: Its stability and high voltage resistance make it an ideal choice for automotive electronic systems, such as power conversion modules and charging pile controllers for electric vehicles.
3. Solar inverter: As a key component in a solar inverter, VBE165R09S can effectively convert DC power generated by solar panels into AC power.
4. LED lighting: In LED lighting applications, VBE165R09S can be used as a switching tube in the power driver to achieve efficient power conversion and dimming control.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性