产品参数:
Detailed parameter description:
- Brand: VBsemi
- Model: VBE165R08S
- Type: Single N-channel field effect transistor
- Maximum drain-source voltage (VDS): 650V
- Maximum gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance (m次) when gate-source voltage is 10V: 560
- Maximum drain current (ID): 8A
- Technology: SJ_Multi-EPI
-Package:TO252
领域和模块应用:
Examples of applicable fields and modules:
1. Industrial power supply: Because VBE165R08S has high voltage resistance and current tolerance, it is suitable for designing industrial power modules to ensure stable and reliable power output.
2. Electric vehicle charging piles: In electric vehicle charging piles, high-performance power devices are required to handle high voltage and large current. VBE165R08S can be used as a key power switching element.
3. Frequency converter: In frequency converters and variable frequency speed regulators, transistors with excellent conduction characteristics and voltage resistance are required to achieve power conversion and motor control. This product can meet these requirements.
4. Solar inverter: suitable for power conversion and control circuits in solar inverters, providing high efficiency and reliability energy conversion solutions.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性