VBE165R07S is a unipolar N-type power field effect transistor (MOSFET) with the following characteristics:
- Rated voltage up to 650V, suitable for high voltage application scenarios.
- Wide gate-source voltage range (±30V), with good voltage tolerance.
- Low threshold voltage (3.5V) helps reduce power loss.
- Drain-source resistance is 700mΩ at VGS=10V, providing reliable turn-on characteristics.
- Drain current is 7A, suitable for medium power needs.
- Using SJ_Multi-EPI technology, it has excellent thermal stability and reliability.
- Packaged as TO252, easy to install and heat dissipate.
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Product model: VBE165R07S
Brand: VBsemi
parameter:
- Type: Unipolar N-type
- Rated voltage (VDS): 650V
- Gate-source voltage range (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- Drain-source resistance (m次) at VGS=10V: 700
- Drain current (ID): 7A
- Technology: SJ_Multi-EPI
Package: TO252
Examples of applicable fields and modules:
1. Power supply: can be used to design efficient and stable switching power supply modules to provide reliable power output.
2. Electric vehicle controller: suitable for power control modules in electric vehicles to help achieve efficient electric vehicle operation.
3. Industrial automation equipment: It can be used as power switch modules in industrial robots, CNC machine tools and other equipment to provide reliable power control.
4. LED lighting system: Used in power switch modules in LED lighting systems to achieve stable current output and extend the service life of LED lights.
5. Solar inverter: suitable for power conversion modules in solar power generation systems to improve energy utilization efficiency.
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