产品参数:
**Product model:** VBE165R06
**Brand:** VBsemi
**Package:** TO252
### Detailed parameter description
- **Type:** Single N MOSFET
- **Maximum drain-source voltage (VDS):** 650V
- **Maximum Gate-Source Voltage (VGS):** ㊣30V
- **Threshold voltage (Vth):** 3.5V
- **Gate-source resistance (RDS(on)) @ VGS=4.5V:** 976 m次
- **Gate-source resistance (RDS(on)) @ VGS=10V:** 1220 m次
- **Maximum drain current (ID):** 6A
- **Technology:** Plannar
领域和模块应用:
### Applicable fields and modules
1. **Power management module:** VBE165R06 has a high drain-source voltage and moderate drain current, and is suitable for switching power supplies, DC-DC converters and other applications in power management modules. Its low gate-source resistance and high drain current enable efficient power conversion.
2. **Automotive Electronics:** In the field of automotive electronics, VBE165R06 can be used as a switching device to realize the control of power switches, electric vehicle control and other high-voltage circuits in automotive electronic systems. Its high drain-source voltage and moderate drain current make it suitable for the power and stability requirements of automotive electronic systems.
3. **Industrial Automation:** This product has a wide range of applications in the field of industrial automation and can be used as switching devices for power switches, driver controls and other high-voltage circuits, with high reliability and stability.
4. **LED lighting:** In LED lighting applications, VBE165R06 can be used as a switching device to realize power conversion and brightness adjustment of LED drivers. Its high drain-source voltage and moderate drain current can meet the power and efficiency requirements of LED lighting systems.
The above is an introduction to the product VBE165R06, detailed parameter descriptions, and examples of applicable fields and modules in the form of paragraphs.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性