MOSFET

您现在的位置 > 首页 > MOSFET

VBE165R05SE 产品详细

产品简介:

Product introduction: VBsemi's VBE165R05SE is a single N-channel power field effect transistor (FET) manufactured using SJ_Deep-Trench technology. Its package is TO252, which has stable and reliable performance and efficient power handling capabilities. Suitable for a variety of application scenarios requiring a single N-channel FET.

文件下载

下载PDF 文档
立即下载

产品参数:

Detailed parameter description:
- Voltage parameters: VDS (drain-source voltage) is 650V, VGS (gate-source voltage) is ㊣30V, and threshold voltage (Vth) is 3.5V.
- Current parameters: At VGS=10V, the drain-source resistance (RDSon) is 750m次, and the maximum drain current (ID) is 5A.

领域和模块应用:

Applicable areas and modules:
1. LED lighting: suitable for LED drivers, lighting control modules and intelligent lighting systems.
2. Power module: used for power management modules such as low-power switching power supplies, chargers and inverters.
3. Automotive electronics: It can be used in automotive electronic control units, motor control and battery management systems of electric vehicles.
4. Household appliances: Power control and switching power supply modules suitable for household appliances, such as air conditioners, refrigerators and washing machines.
5. Industrial control: Can be used for motor control, high-voltage power management and inverters in industrial control systems.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

打样申请

在线咨询

电话咨询

400-655-8788

微信咨询

一键置顶

打样申请
在线咨询
电话咨询
微信咨询