Product introduction: VBsemi's VBE165R05S is a single N-channel power field effect transistor (FET) manufactured using SJ_Multi-EPI technology. Its package is TO252, which has stable and reliable performance. Suitable for a variety of application scenarios requiring a single N-channel FET.
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Detailed parameter description:
- Voltage parameters: VDS (drain-source voltage) is 650V, VGS (gate-source voltage) is ㊣30V, and threshold voltage (Vth) is 3.5V.
- Current parameters: When VGS=10V, the drain-source resistance (RDSon) is 1000m次, and the maximum drain current (ID) is 5A.
Applicable areas and modules:
1. Power module: used for power management modules such as low-power switching power supplies, chargers and inverters.
2. Automotive electronics: It can be used in auxiliary circuits and power management units in automobile electrification systems.
3. LED lighting: suitable for LED drivers and lighting control modules.
4. Household appliances: Can be used for power control and switching power supply modules of household appliances.
5. Industrial control: Suitable for motor control and power inverter in industrial control systems.
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