产品简介：
Product introduction:
VBsemi's VBE165R05 is a Single N field effect transistor manufactured using Plannar technology. Features a drain-to-source voltage (VDS) of 650V, a gate-source voltage (VGS) of 30V, and a threshold voltage (Vth) of 3.5V. At VGS=4.5V, the drain-source resistance (RDS(on)) is 2500mΩ; at VGS=10V, the drain-source resistance is 2000mΩ. Maximum drain current (ID) is 5A. The package form is TO252.
文件下载
产品参数：
Detailed parameter description:
- Voltage parameters: drain-source voltage (VDS) is 650V, gate-source voltage (VGS) is ㊣30V, threshold voltage (Vth) is 3.5V.
- Current parameters: When VGS=4.5V, the drain-source resistance (RDS(on)) is 2500m次; when VGS=10V, the drain-source resistance is 2000m次, and the maximum drain current (ID) is 5A .
- Technology: Made with Plannar technology.
领域和模块应用：
Examples of applicable fields and modules:
1. Power management module: Since VBE165R05 has a high drain-source voltage and moderate drain current, it can be used in power management modules such as DC-DC converters or inverters.
2. Automotive electronic systems: Its high drain-source voltage and high drain current make it suitable for battery management or drive control modules in automotive electronic systems.
3. Industrial automation: In the field of industrial automation, VBE165R05 can be used as power switch modules in control systems, such as industrial robots or automated production lines.
*请注意：以上只是示例应用场景，具体的应用取决于系统设计的要求和条件。在使用该器件时，请查阅其数据手册以获取详细的技术规格和特性
技术支持：
* 如果您对产品有任何问题，请填写表格提交，我们会24小时内回复您
立即下载
中文
English
返回上级页面
