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VBE165R04 产品详细

产品简介:

Detailed product introduction:
VBsemi's VBE165R04 is a single N-channel field effect transistor (MOSFET) with a drain-source voltage (VDS) of 650V, a gate-source voltage (VGS) of 30V, and a threshold voltage (Vth) of 3.5V . It has an on-resistance of 2750mΩ and 2200mΩ at VGS of 4.5V and 10V, respectively, and can withstand a maximum drain current (ID) of 4A. It adopts Plannar technology and is packaged as TO252.

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产品参数:

Parameter Description:
- Model: VBE165R04
- Brand: VBsemi
- Type: Single N-channel field effect transistor (MOSFET)
- Drain-source voltage (VDS): 650V
- Gate-source voltage (VGS): 30V
- Threshold voltage (Vth): 3.5V
- On-resistance when VGS=4.5V: 2750m次
- On-resistance when VGS=10V: 2200m次
- Maximum drain current (ID): 4A
- Technology: Plannar
-Package:TO252

领域和模块应用:

Application areas and module examples:
This product is suitable for the following areas and modules:
1. Power inverter: Inverter used in industrial, household, automotive electronics and other fields to convert DC power into AC power.
2. Electric vehicle charging pile: As a power switching element in the electric vehicle charging pile, it controls the current and voltage during the charging process.
3. UPS system: In uninterruptible power supply system, used for backup power switch and battery management.
4. Wind and solar inverters: used in wind power and solar power systems as a key component of the inverter.
5. Industrial automation equipment: used for power switch control in factory automation control systems, robots and power tools.

These fields and modules require high-performance, high-reliability power switching components to achieve power control and conversion functions, and VBE165R04 is an ideal choice to meet these requirements.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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